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Ferroelectric Dielectrics Integrated on Silicon －－ 集成在硅上的铁电介质 This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.
After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.
本书介绍了应用于超越Moore（摩尔定律）的高K材料的最新技术，即应用于微电子核心技术的微系统。
本书详细介绍了应用于包括外在效应的高K电介质薄膜的基本热力学理论，本书强调了薄膜的特异性。 然后介绍沉积和图案化技术。 整个章节致力于通过X射线衍射表征在该领域发挥的主要作用，并且还描述了其他表征技术，例如射频表征。 对泄漏电流的影响进行深入研究，并结合可靠性讨论。 三个应用章节涵盖了集成电容器，变量电容器和铁电存储器。 最后一章讨论了一个相当新的研究领域，即多层薄膜。
本书的读者：电气电子工程，机械工程和工业工程研究生和专业人士。
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发表于 2017-12-14 17:57:05