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[资料共享] Power GaN Devices: Materials, Applications and Reliability

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发表于 2017-12-14 15:47:13 | 显示全部楼层 |阅读模式

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Power GaN Devices: Materials, Applications and Reliability --- 功率GaN器件:材料,应用和可靠性

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.  It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption.

The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach.

This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

本书是对基于GaN功率晶体管的性能和制造方法的第一次完整全面的概述,并得到了该领域最活跃的研究团队的贡献。本书描述了氮化镓如何作为用于制造功率晶体管的优良材料出现;由于GaN的高能隙,高击穿场和饱和速度,这些器件可以达到超过kV范围的击穿电压,以及非常高的开关频率,因此适用于功率转换系统。基于GaN,效率超过99%的开关模式功率转换器已经被证明,从而为电力转换市场中大量采用GaN晶体管的方式做好了准备。由于电力转换损失占全球用电量的10%,预计氮化镓在环境和经济两个方面都有重要的优势。

本书的第一部分描述了与常规半导体材料相比的氮化镓的性质和优点。本书的第二部分描述了用于器件制造的技术,以及GaN-on-Silicon批量生产的方法。特别注意三种最先进的器件结构:横向晶体管,垂直功率器件和基于纳米线的HEMT。本书涵盖的其他相关课题是常关操作的策略,以及与设备可靠性相关的问题。最后一章综述了基于系统级方法的GaN HEMT的开关特性。

本书是在材料,设备和电力电子领域工作的人的独特参考;它提供关于氮化镓材料生长,器件制造,可靠性问题和电路级开关调查的跨学科信息。


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